新型高性能二维半导体晶圆级生长和可控掺杂领域获重大突破_老虎社区_美港股上老虎

新型高性能二维半导体晶圆级生长和可控掺杂领域获重大突破

金吾财讯04-09

金吾财讯 | 据国防科技大学官网消息，近日，该大学和中国科学院金属研究所联合研究团队在新型高性能二维半导体晶圆级生长和可控掺杂领域取得重要突破，实现了晶圆级、掺杂可调的单层WSi2N4薄膜的可控生长，其研发的新方法将畴区尺寸提升至亚毫米级，生长速率较已有文献报道值高出约3个数量级。有望为后摩尔时代自主可控的芯片技术提供关键材料和器件支撑。目前，相关成果在线发表于国际顶级期刊《国家科学评论》。

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