消息称三星电子1c DRAM良率超80% HBM4良率接近60%_老虎社区_美港股上老虎

消息称三星电子1c DRAM良率超80% HBM4良率接近60%

金吾财讯02-25

金吾财讯 | 业内人士透露，三星电子内部已实现1c DRAM 80%的良率，这是在高温环境下（热测试）取得的最高良率，2025年第四季度其良率约为60-70%，如今已显著提升，并有望在5月份左右达到90%。业内人士进一步表示，三星基于1c DRAM的HBM4的良率也有所提高，已接近60%，去年第四季度约为50%。

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