山人12345
14:28
这个新产品主要针对的是新的业务板块，对于赛晶科技的来说还是很重要的，在这些领域市场空间很大
@赛晶科技：
新品发布 | 1200V 1000A ST封装半桥IGBT模块
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</ul>\n <p><strong><span></span><span>竞争优势</span></strong></p>\n <ul>\n <li>\n <p><span>基于多年功率半导体研发经验优化的国产IGBT与二极管芯片组</span></p></li>\n <li>\n <p><span>高鲁棒性短路耐受能力，提升系统安全性</span></p></li>\n <li>\n <p><span>优化开关特性，降低高频应用中的功耗</span></p></li>\n <li>\n <p><span>支持高功率密度输出，适用于紧凑型设备设计</span></p></li>\n <li>\n <p><span>采用可追溯性管理进行质量控制</span></p></li>\n </ul>\n <p><strong><span>应用领域</span></strong></p>\n <ul>\n <li>\n <p><span>光伏</span></p></li>\n <li>\n <p><span>储能PCS</span></p></li>\n <li>\n <p><span>电机控制</span></p></li>\n <li>\n <p><span>商用车</span></p></li>\n <li>\n <p><span>UPS</span></p></li>\n </ul>\n <p><span>1200V 1000A ST封装半桥IGBT模块，现已量产。</span><span>欢迎广大客户访问赛晶半导体公司网站 https://www.swiss-sem.com/，查阅详情、索取样品。</span></p>\n <p><img src=\"https://static.tigerbbs.com/c9849b572da7436fa66956afe9eaebf8\"></p>\n</div></body></html>","text":"采用成熟的ST封装半桥拓扑设计，1000A的大额定电流可减少甚至避免 IGBT 模块并联，显著简化系统设计并提升可靠性。高集成度与优异的性能，在系统层面为客户提供更具吸引力的性价比。出色的温度循环能力，运行结温提升至175℃，显著提高了产品功率密度。 该模块配备全新的i23精细微沟槽栅型IGBT芯片组实现极高的电流密度，超低的损耗给模块带来出色的系统可靠性。 新品发布 1200V 1000A ST封装半桥IGBT模块 产品型号 SISD01000ST120i23_A01 产品特点 i23超低损耗微沟槽栅IGBT芯片组 高效 AI2O3绝缘陶瓷基板 高爬电距离与电气间隙 低热阻铜底板 行业标准封装 竞争优势 基于多年功率半导体研发经验优化的国产IGBT与二极管芯片组 高鲁棒性短路耐受能力，提升系统安全性 优化开关特性，降低高频应用中的功耗 支持高功率密度输出，适用于紧凑型设备设计 采用可追溯性管理进行质量控制 应用领域 光伏 储能PCS 电机控制 商用车 UPS 1200V 1000A ST封装半桥IGBT模块，现已量产。欢迎广大客户访问赛晶半导体公司网站 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