通富微电：具备LPDDR 12DP工程能力开发基础

证券之星09-11

证券之星消息，通富微电(002156)09月11日在投资者关系平台上答复投资者关心的问题。

投资者提问：公司半年报披露完成LPDDR 16DP产品技术方案开发。请问16DP是否是在已有成熟LPDDR量产平台上的进一步升级？公司此前8DP、12DP等较低堆叠产品是否已实现规模量产？

通富微电回复：尊敬的投资者，您好！公司持续围绕存储封装在高堆叠、高密度、高良率等方向开展技术储备和工艺优化，持续提升存储封测产品的性能与可靠性。例如，公司已掌握3D NAND多芯片堆叠技术、3Ds 2/4H Strip Level DRAM技术、PoP技术，具备LPDDR 12DP工程能力开发基础，在高层数存储堆叠封装领域形成了较为扎实的技术积累。谢谢！

本文数据来源于深圳证券交易所互动易，仅供参考不构成投资建议。

责任编辑：刘浩然

免责声明：本文观点仅代表作者个人观点，不构成本平台的投资建议，本平台不对文章信息准确性、完整性和及时性做出任何保证，亦不对因使用或信赖文章信息引发的任何损失承担责任。

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