通富微电：已掌握3D NAND多芯片堆叠技术

证券之星09-11

证券之星消息，通富微电(002156)09月11日在投资者关系平台上答复投资者关心的问题。

投资者提问：随着新一代LPDDR向高I/O、高速率发展，请问公司是否已具备1000 Ball以上高密度BGA/PoP存储产品的量产封装能力？相关平台目前处于技术开发、客户验证还是规模量产阶段？

通富微电回复：尊敬的投资者，您好！公司持续围绕存储封装在高堆叠、高密度、高良率等方向开展技术储备和工艺优化，持续提升存储封测产品的性能与可靠性。例如，公司已掌握3D NAND多芯片堆叠技术、3Ds 2/4H Strip Level DRAM技术、PoP技术，具备LPDDR 12DP工程能力开发基础，在高层数存储堆叠封装领域形成了较为扎实的技术积累。谢谢！

本文数据来源于深圳证券交易所互动易，仅供参考不构成投资建议。

责任编辑：刘浩然

免责声明：本文观点仅代表作者个人观点，不构成本平台的投资建议，本平台不对文章信息准确性、完整性和及时性做出任何保证，亦不对因使用或信赖文章信息引发的任何损失承担责任。

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