三星与ASML合作开发下一代EUV光刻掩模版

格隆汇09-09

据首尔经济日报，三星电子将与全球最大的光刻设备制造商ASML共同开发高数值孔径（High-NA）极紫外（EUV）光刻技术。三星正参与一项旨在推动行业标准转变的工作，即将自20世纪80年代以来一直使用的6英寸光掩模版转向12英寸版本，并力争率先基于高NA EUV设备建立DRAM量产体系。三星计划从2028年开始将高NA EUV设备应用于DRAM生产，随后进一步将这项技术扩展至1.4纳米先进逻辑工艺，...

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