面向2.5D/3D先进封装长电科技高深宽比TSV研发取得突破

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【面向2.5D/3D先进封装长电科技高深宽比TSV研发取得突破】8月19日，长电科技宣布，公司在高深宽比先进TSV技术研发方面取得重要进展，并与合作伙伴共同完成样品试制。长电科技的TSV制备方案面向2.5D/3D先进封装、硅基互连和多维异质异构集成等高端先进封装应用，旨在进一步增强公司在微系统集成平台中的关键底层工艺能力，为高算力、高存力芯片的系统级集成提供更加完整、灵活的一站式制造支撑。

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面向2.5D/3D先进封装 长电科技高深宽比TSV研发取得突破

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面向2.5D/3D先进封装长电科技高深宽比TSV研发取得突破