三星(SSNLF.US)亮出3D内存“技术核弹”：400层V-NAND与zHBM概念首秀，直指AI内存王座

智通财经08-05 09:12

【三星(SSNLF.US)亮出3D内存“技术核弹”：400层V-NAND与zHBM概念首秀，直指AI内存王座】智通财经APP获悉，当地时间周二，三星电子(SSNLF.US)在美国加州圣克拉拉举行的“未来内存与存储”大会上，集中展示了面向人工智能(AI)时代的下一代内存技术，包括超过400层的V10 BV-NAND原型、垂直堆叠式高带宽内存zHBM以及zNAND-O架构，力图在近1万亿美元规模的存储芯片市场中巩固领先地位，并加速追赶在AI内存领域先发制人的SK海力士与美光科技(MU.US)。

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