SK海力士确认V10 NAND闪存为375层堆叠导入晶圆键合技术

格隆汇08-07 19:09

SK海力士在其FMS 2026峰会新闻稿中确认，其继321层V9 "4D NAND" 后的新一代闪存产品V10采用375层堆叠设计。这也是SK海力士首款采用晶圆键合技术的NAND产品。SK海力士宣称V10 NAND实现了上代产品2.5倍的每瓦性能，专为需要兼顾能效和性能的AI基础设施环境而优化。

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SK海力士确认V10 NAND闪存为375层堆叠 导入晶圆键合技术

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SK海力士确认V10 NAND闪存为375层堆叠导入晶圆键合技术