消息称三星电子完成900层超高堆叠3D NAND闪存原型开发

IT之家05-25 17:29

IT之家 5 月 25 日消息，据韩媒当地时间今日报道，三星电子近期利用单元多层键合 (CMB) 技术连接两片 450 层 3D NAND，构建了全球首个 900 层超高堆叠 3D NAND 闪存原型，这一样品的存储单元工作特性已得到验证。

▲ 三星电子 V9 QLC

将两片 450 层 NAND“摩天大楼”整合为一片 900 层 NAND，这一过程对键合的可靠性提出了非常高要求。

三星电子在原型制造中以“上部卡盘”(Upper Chuck) 解决了晶圆翘曲问题，并以新型套刻校正技术克服了微细对准误差，此外位线 (BL) 与字线 (WL) 的改进也同时改进了功耗和尺寸。

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