云南锗业：公司于2026年4月开始实施“高品质磷化铟单芯片建设项目”

证券日报 05-07

证券日报网5月7日讯，云南锗业在接受调研者提问时表示，经公司董事会批准，公司于2026年4月开始实施“高品质磷化铟单芯片建设项目”，该项目计划建设期为18个月，计划在现有产能基础上扩建一条年产30万片（折合4英寸计算，其中包括6000片6英寸）高品质磷化铟单芯片生产线，最终达到年产45万片（折合4英寸）高品质磷化铟单芯片的产能。目前上述项目建设工作正按计划开展，项目产能将随着建设进度逐步释放。（...

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