SK海力士正在积极评估是否在其第七代高带宽存储（HBM4E）的逻辑芯片上采用台积电的3nm制程希望借此缩小与三星电子的性

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SK海力士正在积极评估是否在其第七代高带宽存储（HBM4E）的逻辑芯片上采用台积电的3nm制程希望借此缩小与三星电子的性能差距。然而业内分析师警告称量产时程与成本问题可能对SK海力士的3nm计划带来不小风险。（台湾电子时报）。

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