ROHM携手台积电：强攻AI与EV用GaN，2026-2027年大动作全解析

与非网03-02

日本半导体厂商ROHM半导体近日宣布，将其自身开发的氮化镓（GaN）功率器件技术与长期合作伙伴——台湾晶圆代工厂台积电（TSMC）的制程技术进行深度整合，在ROHM集团内部构建从设计到量产的完整端到端生产体系。通过授权使用台积电的GaN制程技术，ROHM旨在显著提升供应能力，以应对AI服务器、电动汽车（EV）等领域对GaN功率器件的快速增长需求。GaN功率器件凭借优异的高压和高频性能，能够大幅提高...

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2026-2027","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"TSM":1.96,"03145":0.6,"STSM":0.6,"TSMZ":0.6,"TSMU":0.6,"TSMG":0.6,"TSMY":0.6,"TSMX":0.6},"content_text":"日本半导体厂商ROHM半导体近日宣布，将其自身开发的氮化镓（GaN）功率器件技术与长期合作伙伴——台湾晶圆代工厂台积电（TSMC）的制程技术进行深度整合，在ROHM集团内部构建从设计到量产的完整端到端生产体系。通过授权使用台积电的GaN制程技术，ROHM旨在显著提升供应能力，以应对AI服务器、电动汽车（EV）等领域对GaN功率器件的快速增长需求。GaN功率器件凭借优异的高压和高频性能，能够大幅提高系统效率并缩小体积，已广泛应用于消费电子领域的AC适配器。目前，其应用正加速扩展至高压场景，如AI服务器电源单元和电动汽车车载充电器，市场需求预计将持续强劲增长。ROHM在GaN领域起步较早，2022年3月已在ROHM滨松工厂（Hamamatsu）建立150V GaN量产体系。在中功率领域，ROHM一方面强化自有供应结构，另一方面积极推进外部合作，其中台积电是核心伙伴。2023年，ROHM采用台积电650V GaN制程；2024年12月，双方进一步签署汽车级GaN合作协议，合作关系持续深化。此次最新动作标志着双方合作的进阶。根据新签订的授权协议，台积电将把相关GaN制程技术转移至ROHM滨松工厂。ROHM计划于2027年完成生产线建设，以满足AI服务器等高端应用不断扩大的需求。技术转移完成后，双方原有的汽车级GaN特定合作将正式结束，但ROHM与台积电将继续在更高效率、更紧凑型电源系统开发上保持紧密协作。这一举措不仅强化了ROHM在宽禁带半导体领域的垂直整合能力，也为全球功率器件供应链注入新活力。ROHM近期动态与战略布局ROHM近期的动态与布局聚焦于宽禁带功率半导体（SiC与GaN双轮驱动）、汽车级产品升级、集团制造重组以及新兴市场拓展，旨在牢牢把握AI服务器、电动汽车、工业设备等高增长赛道。截至2026年2月底，其战略执行呈现出稳健且加速的态势。2026年2月最新重点动作2月26日，ROHM与台积电签订GaN制程技术授权协议，标志着滨松工厂GaN生产体系建设正式启动，目标2027年实现量产。该动作直接响应AI服务器和电动汽车高压GaN需求的爆发式增长。同日，ROHM宣布TRCDRIVE pack™、HSDIP20、DOT-247等新型SiC功率模块全面启动在线销售。这些模块采用第4代SiC MOSFET，功率密度较传统产品提升1.5倍，特别适合300kW以下电动汽车牵引逆变器及工业应用。2月18日，ROHM推出HPLF5060小型高可靠性封装（4.9×6.0mm）的40V/60V汽车级MOSFET系列，并计划2026年2月前后量产更小型的DFN3333封装（带可润湿侧翼技术），进一步完善汽车电子产品阵容。2025下半年至2026年初重要布局2025年12月22日，ROHM与印度塔塔电子（Tata Electronics）达成战略合作，在印度共建功率半导体制造框架，结合ROHM的器件技术与塔塔的制造生态，服务印度及全球市场，此举是ROHM供应链区域多元化的关键一步。2025年12月，ROHM SCT40xxDLL系列SiC MOSFET（TOLL封装）实现量产，该系列导通电阻13mΩ～65mΩ，热性能较传统TO-263-7L提升约39%，广泛适用于服务器电源与储能系统（ESS）。2025年10月，ROHM启动集团制造重组，将滋贺工厂及多家国内子公司重组为“前工程制造公司”和“后工程制造公司”两个独立主体，计划2026年4月起逐步生效，2027年4月完成滋贺工厂转移。此举旨在提升决策效率、标准化工艺并增强抗周期波动能力。同期，ROHM发布800VDC架构AI基础设施电源白皮书，强调SiC与GaN在下一代数据中心的高效、低噪、小型化价值，并多次上修2026财年业绩预期（销售目标从4400亿日元上调至4800亿日元），主要得益于汽车回暖、服务器需求强劲及日元贬值等因素。ROHM的整体战略清晰：以SiC+GaN双轮驱动抢占AI与电动化市场，通过技术授权、自建产能、封装创新和全球布局，全面强化供应链掌控力与交付能力。台积电近期动态与战略布局作为全球晶圆代工龙头，台积电（TSMC）正全力应对AI需求爆炸式增长，通过先进制程扩产、先进封装倍增以及全球布局分散风险，巩固其“AI基础设施基石”地位。2026年被视为AI超级周期延续之年，台积电反复强调需求具有“结构性、多年度”特征。截至2026年2月底，其各项指标均呈现强劲增长态势。2026年2月最新重点动作2026年1月合并营收达4012.6亿新台币，环比增长19.8%，同比增长36.8%，主要由AI芯片强劲拉动。 台积电2nm（N2）制程产能几近售罄，已敦促客户提前锁定2027年Q2产能，苹果、英伟达等大厂抢单激烈。N2自2025年下半年在新竹/高雄量产，2026年快速爬坡，初期规模有望超越N3世代。先进封装（CoWoS）产能目标2026年底达14万片/月（较近期翻倍），2027年底进一步提升至17万片。嘉义AP7厂将成为2027年主力，台南AP8同步推进，支持9.5倍光罩尺寸CoWoS及12+ HBM堆叠。 董事会决议2026年每股股利至少23元新台币，较2025年增长28%。2025下半年至2026年初核心财务与布局2025年第四季度法说会（1月15日）披露：营收337亿美元，同比增长25.5%；净利润160亿美元，同比增长35%；毛利率62.3%（历史高位）；AI加速器收入占比已达17-19%。2026全年营收美元计同比增长近30%，资本支出大幅上调至520-560亿美元（历史新高），其中70-80%投向先进制程，10-20%用于先进封装。AI加速器收入2024-2029年复合年增长率上调至mid-to-high 50%。先进制程路线图明确：N2 2025Q4量产、2026快速放量；N2P增强版2026下半年量产；A16（超级电轨）同步2026下半年量产。 全球布局加速：美国亚利桑那州总投资扩至1650亿美元，规划6座晶圆厂+2座先进封装厂。Fab 1已高量产4nm，Fab 2 2026年设备搬入、2027下半年量产，Fab 3针对N2/A16已动工。日本熊本JASM二厂动工并评估升级至3nm（最快2028量产）；德国德累斯顿ESMC厂稳步推进；台湾本土持续最大规模投资，多地同步建设N2与CoWoS产能。海外布局并非替代台湾，预计2036年台湾仍占先进制程约80%。台积电的战略核心是先进制程（N2/A16）+先进封装（CoWoS/CPO）双引擎驱动，通过巨额资本支出、客户提前锁定和全球建厂，确保在AI时代的主导地位，毛利率长期目标维持56%以上。","kind":"news","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"1","news_tag":"corporation","news_rank":0,"isVideo":false,"video":null,"symbols":[],"gpt_button":0,"need_auth":false,"need_login_tip":false,"code":"91000000","status":"200"},"commentList":[],"isCommentEnd":true,"newsSizeData":{"likeSize":0,"commentSize":0,"repostSize":0,"favoriteSize":0,"likeStatus":false,"favoriteStatus":false},"APP":{"userAgent":"Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; 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