扩产近两成：消息称三星电子将在平泽 P4 建设大型 HBM4 用 1c nm 内存产线

IT之家02-05

IT之家 2 月 5 日消息，韩媒 hankyung 当地时间今日报道称，三星电子计划在平泽 P4 晶圆厂综合体建设一条用于生产 HBM4 内存所需 1c nm DRAM Die 的大型生产线。该生产线计划明年一季度投入生产，月产能达 10~12 万片晶圆。作为参考，三星电子在 2026 年的月均 DRAM 产能为 66 万片晶圆，换句话说这一条生产线就能贡献总产能近 1/5 的制造能力。如果加上...

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