英特尔发布12吋GaN芯片，衬底厚度仅19µm

行家说三代半01-08

近期，英特尔在官网透露，他们对外展示了基于12英寸硅晶圆的GaNChiplet技术，并表示这项技术将有效解决下一代高性能功率和射频（RF）电子产品在功率传输和效率方面的挑战。“行家说三代半”进一步调研发现，英特尔的12英寸GaNChiplet技术具有以下显著特点：号称采用业界最薄的氮化镓芯片，其底层硅衬底厚度仅为19µm，取自完全加工、减薄和单晶化的12英寸硅基氮化镓晶圆，后者采用采用 SDBG...

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