比亚迪半导体、株洲中车等3家企业披露最新进展

中国LED网2025-12-29

近期，国产功率半导体“三线”齐传捷报：株洲中车53亿元8英寸SiC晶圆线正式通线，年增36万片产能；宁波比亚迪24万片SiC芯片技改项目通过验收，1200V沟槽栅MOSFET量产在即；东台富乐华10亿元高导热陶瓷基板项目主体封顶，180万片/年封装材料产线落地。中车中低压功率器件产业化（株洲）建设项目通线12月26日，株洲中车举行中低压功率器件产业化（株洲）建设项目通线仪式，标志着国内又一条8英寸...

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progress","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"81211":0.6,"601766":1.88,"01766":1.88,"HYDD.SI":0.6,"BYDDY":1.86,"002594":1.86,"01211":1.86},"content_text":"近期，国产功率半导体“三线”齐传捷报：株洲中车53亿元8英寸SiC晶圆线正式通线，年增36万片产能；宁波比亚迪24万片SiC芯片技改项目通过验收，1200V沟槽栅MOSFET量产在即；东台富乐华10亿元高导热陶瓷基板项目主体封顶，180万片/年封装材料产线落地。中车中低压功率器件产业化（株洲）建设项目通线12月26日，株洲中车举行中低压功率器件产业化（株洲）建设项目通线仪式，标志着国内又一条8英寸碳化硅（SiC）功率器件晶圆线进入量产阶段，年产能新增36万片，将显著缓解电动汽车、光伏逆变器、充电桩等下游市场对国产高端功率半导体的需求缺口。图片来源：湖南省半导体行业协会该项目总投资53亿元，从2025年1月全面施工，至今仅用11个月完成建设到通线，被湖南省列为2025年“十大产业项目”之一。其新征用地约266亩，新建生产调度楼、生产厂房、动力厂房等建筑超8万平方米，达产后将新增年产36万片碳化硅功率器件产能（8 英寸等效片）。该项目重点突破精细光刻、沟槽刻蚀、高温栅氧、高温离子注入、大尺寸SiC减薄五大核心工艺技术，不仅可满足第三代、第四代碳化硅产品的规模化量产需求，更前瞻布局第五代、第六代技术研发，持续引领行业技术创新。公开资料显示，中车时代电气是中国中车旗下股份制企业，成立于2005年，目前已形成了“基础器件+装置与系统+整机与工程”的完整产业链结构，产业涉及轨道交通、新能源发电、汽车电驱等领域。技术层面，公司完成第四代沟槽栅SiC MOSFET定型，11mΩ/7mΩ芯片性能指标达到国际领先水平；首次实现车规级SiC模块小批量交付，并突破SiC动态特性及可靠性底层技术。市场层面，宜兴三期功率半导体基地6月底已达设计产能，中低压器件出货量居国内新能源车主驱、光伏逆变器前列；320kW组串式光伏逆变器、2500kW液冷储能变流器实现批量应用；传感器业务接近2023年同期水平，汽车传感获得多个新定点。比亚迪半导体宁波SiC芯片项目通过验收近期，宁波比亚迪半导体有限公司对外公示了新型功率半导体芯片产业化及升级项目竣工环境保护验收相关文件。图片来源：公示截图“新型功率半导体芯片产业化及升级项目”已于2025年11月通过竣工环保验收。技改后宁波基地形成24万片/年SiC等新型功率半导体（含TVS、SBD、PD、CMOS等）产能，同时保留7.8万片IGBT+7.8万片FRD作为混合产能，总投资7.44亿元。宁波海关披露，公司2月启动1200V沟槽栅SiC MOSFET晶圆保税研发；项目负责人称“研发片一旦通过检测即可迅速转量产”，配套产线升级完成后目标月产1万片（折合年12万片）。这意味着宁波厂未来SiC产能仍有翻倍空间。验收报告列出已导入的干法刻蚀机、栅氧氧化炉、高温退火炉等关键设备，主材为6英寸SiC晶圆，目前“主体设施和环保设施运行稳定”，标志着6英寸SiC芯片进入常态化生产。综上，宁波比亚迪半导体2025年已完成从“IGBT+FRD”向“SiC为主、硅基补充”的产品结构切换，24万片/年SiC产能率先释放，1200V沟槽栅MOSFET有望于2026年进一步放量，为比亚迪全系新能源车型提供主驱逆变器核心芯片。江苏东台富乐华高导热陶瓷基板项目主体封顶据东台融媒、富乐华半导体官方消息，12月23日，江苏富乐华半导体科技股份有限公司在盐城东台高新区投资建设的高导热大功率溅射陶瓷基板项目主体结构正式封顶。图片来源：富乐华半导体据悉，该项目规划总投资10亿元，其中一期项目投资31833.27万元，新增用地约80.8亩，新增建筑面积约74000平方米，一期项目引进国内外先进的磁控溅射机、自动敷胶机、光刻机、全自动显景机、电镀铜线、电镀镍金线、自动抛光机、自动光学检测设备、超声扫描设备等约200台/套，建设年产180万片高导热大功率溅射陶基板自动化生产线。高导热大功率溅射陶瓷基板具有优良的导热性、高绝缘性、大电流承载能力、高附着强度等优点，正成为高端功率半导体封装的核心材料。项目全面建成后，将会大幅优化富乐华公司在功率半导体器件领域的产品结构，增强公司盈利能力，进一步提高公司在激光热沉产品、热电制冷产品、激光雷达和光通讯等领域的竞争优势。（集邦化合物半导体 竹子 整理）更多SiC和GaN的市场资讯，请关注微信公众账号：集邦化合物半导体。","kind":"news","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"0","news_tag":"","news_rank":0,"symbols":[],"gpt_button":0,"need_auth":false,"code":"91000000","status":"200"},"commentList":[],"isCommentEnd":true,"newsSizeData":{"likeSize":0,"commentSize":0,"repostSize":0,"favoriteSize":0,"likeStatus":false,"favoriteStatus":false},"APP":{"userAgent":"Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; 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