中芯国际集成电路制造（北京）有限公司等一种半导体结构及其形成方法专利完成登记（半导体制造专利快讯）

DoNews2025-12-27

天眼查App显示，2025-12-26，“一种半导体结构及其形成方法”正式进入公布阶段。申请人为中芯国际集成电路制造（北京）有限公司,中芯国际集成电路制造（上海）有限公司，该项半导体制造专利涉及先进制程中键合垫过孔与台阶结构的精准构建场景。据专利信息显示，通过在第一介质层上方设置刻蚀速率更低的刻蚀停止层，有效抑制刻蚀过程中关键尺寸的扩大，使沟槽与过孔间的台阶结构稳定性显著优化，提升达关键尺寸...

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