SK海力士推迟HBM4量产

电子工程专辑12-15

12月8日消息，韩国媒体ZDNet Korea披露，存储巨头SK海力士已正式推迟第六代HBM4的量产与扩产计划——原定2026年2月启动量产、第二季度扩大产能的安排，现延后至2026年3–4月量产，第三季度才开始放量。这一调整不仅反映出先进存储技术落地的复杂性，更揭示了AI芯片生态中供需错配与制造瓶颈的深层关系。而SK海力士推迟HBM4 量产，意味着所需材料和零组件供应速度也放缓。据悉，SK海力士...

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Korea披露，存储巨头SK海力士已正式推迟第六代HBM4的量产与扩产计划——原定2026年2月启动量产、第二季度扩大产能的安排，现延后至2026年3–4月量产，第三季度才开始放量。这一调整不仅反映出先进存储技术落地的复杂性，更揭示了AI芯片生态中供需错配与制造瓶颈的深层关系。而SK海力士推迟HBM4 量产，意味着所需材料和零组件供应速度也放缓。据悉，SK海力士...</p>\n\n<a href=\"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20251215142844a44cc691&s=b\">网页链接</a>\n\n</div>\n\n\n</article>\n</div>\n</body>\n</html>\n","isBrief":false,"type":0,"news_type":1,"symbol":"LU1721428933.USD","symbol_name":"法巴全球经典环境基金RH MD Dis","start_time":0,"source_url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20251215142844a44cc691&s=b","article_id":"2591188046","we_media_id":null,"thumbnails":[],"rights":{"source":"tencent","url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN20251215142844a44cc691&s=b","rn_cache_url":null,"customStyle":"body{padding-top:10px;}#news_title{font-weight:bold;#titleStyle#;}#news_description span{font-size:12px;#descriptionStyle#;}.footer-note{#statement#}","selectors":".mod-LoadTzbdNews, 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\"P\" (USD) ACC","LU1244550221.USD":"FRANKLIN GLOBAL MULTI-ASSET  INCOME \"A\" (USDHEDGED) INC (M)"},"translate_title":"SK Hynix Delays HBM4 Production","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"NVIW.SI":0.6,"NVDU":0.6,"NVDY":0.6,"03145":0.6,"2NVD.UK":0.6,"TSM":0.9,"NVDS.UK":0.6,"NVDS":0.6,"NVD":0.6,"3NVD.UK":0.6,"NVD2.UK":0.6,"NVDD":0.6,"SNVD.UK":0.6,"NVD3.UK":0.6,"NVDX":0.6},"content_text":"12月8日消息，韩国媒体ZDNet Korea披露，存储巨头SK海力士已正式推迟第六代HBM4的量产与扩产计划——原定2026年2月启动量产、第二季度扩大产能的安排，现延后至2026年3–4月量产，第三季度才开始放量。这一调整不仅反映出先进存储技术落地的复杂性，更揭示了AI芯片生态中供需错配与制造瓶颈的深层关系。而SK海力士推迟HBM4 量产，意味着所需材料和零组件供应速度也放缓。据悉，SK海力士HBM4逻辑芯粒由台积电代工，意味着SK海力士需与外部Foundry深度协同，打破过去DRAM垂直整合的惯性。这种跨工艺、跨厂商的集成模式，在良率爬坡和量产一致性上天然更具不确定性。当然，市场需求也是影响HBM4规模化量产的另一大原因。HBM4本被视为英伟达下一代AI旗舰芯片“Rubin”的标配内存。Rubin预计于2026年接棒当前Blackwell架构，性能目标大幅提升，对内存带宽提出前所未有的要求。为此，HBM4在技术上实现重大突破：I/O端口数量从HBM3E的1,024个倍增至2,048个，数据传输通道近乎翻番；同时，用于控制HBM的逻辑芯粒（logic die）将首次放弃传统DRAM制程，转而采用台积电的先进晶圆代工工艺，以提升信号完整性与能效比。这些创新虽极具前瞻性，却也显著抬高了制造难度与验证周期。据消息人士透露，SK海力士此前已为配合英伟达需求，试产约2万至3万颗HBM4样品供质量验证。但近期双方就2026年供货计划沟通后发现，英伟达大幅上调HBM3E采购量，暗示其Rubin芯片可能面临延期。背后原因多重：一方面，Rubin追求极致性能，对HBM4与CoWoS先进封装的协同要求极高；另一方面，台积电CoWoS 2.5D封装产能持续紧张，已成为整个AI芯片供应链的“卡脖子”环节。在此背景下，英伟达选择延长Blackwell生命周期，优先保障现有产品交付。面对客户需求的转向，SK海力士迅速调整策略：2026年上半年仍将HBM3E作为生产重心，确保Blackwell GPU的稳定供应。该公司回应称：“虽无法确认具体经营细节，但将根据市场需求灵活应对。”","kind":"news","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"-1","news_tag":"","news_rank":0,"symbols":[],"gpt_button":0,"need_auth":false,"code":"91000000","status":"200"},"commentList":[],"isCommentEnd":true,"newsSizeData":{"likeSize":0,"commentSize":0,"repostSize":0,"favoriteSize":0,"likeStatus":false,"favoriteStatus":false},"APP":{"userAgent":"Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; 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