华工科技联合中科大突破半导体激光退火关键技术，最新成果登陆国际权威期刊

华工科技微视界07-10

近日，华工科技中央研究院与中国科学技术大学合作开展的宽禁带化合物半导体激光退火研究取得重大进展，由中国科学技术大学李家文教授为通讯作者，华工科技中央研究院半导体项目技术负责人黄伟博士为共同通讯作者所著的论文《Numerical simulation and experimental investigation of laser pulse duration effects on Ni/SiC ...

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Technology》是Elsevier出版社旗下专注应用光学与激光技术的国际权威期刊（中科院工程技术2区），创刊逾50年来持续聚焦激光工艺、光电子器件及先进光学工程领域的前沿研究。其最新五年影响因子达5.1，位居JCR光学领域Q2分区，以严格的学术评审和显著的工程应用导向着称，被全球学术界与工业界共同认定为激光技术产业化创新成果的首选发表平台之一。该论文的研究内容聚焦在高能量紫外脉冲激光作用于宽禁带化合物半导体碳化硅（SiC）晶体材料及金属表面的作用机制，分析激光引发的材料物理化学变化，精准揭示其对半导体器件电学性能的影响。研究团队通过高能量紫外脉冲激光作用于碳化硅（SiC）晶体及金属表面，首次系统及深刻地揭示了不同紫外激光脉宽下调控宽禁带化合物半导体器件电学性能的原理和方法，通过软件仿真了解紫外脉冲激光在金属镍（Ni）薄膜和SiC中热扩散机理和路径，再依托华工科技自主研发的全自动SiC晶圆激光退火装备实现工艺落地，完成Ni/SiC器件的欧姆接触退火测试，并得到行业内较好水准的器件性能参数，为激光退火技术在化合物半导体的量产应用提供了理论依据与工艺范式。基于研究成果转化的华工科技全自动SiC晶圆激光退火装备目前已实现产业化突破。该设备兼容6/8英寸晶圆及减薄片、键合片等各类SiC晶圆加工，通过机台前置EFEM系统预定位，结合定制激光退火头和精密运动平台，实现对整片SiC晶圆背金面(Ni/Ti层)退火，形成良好欧姆接触，降低接触电阻，提高器件电学性能。经量产验证，该装备WPH≥15片（每四分钟可加工一片晶圆），工艺均匀性≥95%，关键指标居行业领先水平，目前已在半导体厂商投入实际验证。面向化合物半导体产业升级需求，华工科技依托产学研深度融合优势，构建覆盖第一代至第四代半导体材料的工艺装备体系，开发出激光加工与量测两大类产品线，打造六类核心智能装备，贯通半导体前道制造与后道封装环节。未来，华工科技将持续深化技术创新，为国产化合物半导体制造自主可控提供新质生产力支撑。往期推荐华工科技举行武汉市半导体激光装备产业创新联合实验室启动仪式10余款产品，“新”意十足！华工科技旗下两家子公司亮相2025九峰山论坛暨化合物半导体产业博览会","kind":"news","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"1","news_tag":"productRelease","news_rank":0,"symbols":[],"gpt_button":1,"need_auth":false,"code":"91000000","status":"200"},"commentList":[],"isCommentEnd":true,"newsSizeData":{"likeSize":0,"commentSize":0,"repostSize":0,"favoriteSize":0,"likeStatus":false,"favoriteStatus":false},"APP":{"userAgent":"Mozilla/5.0 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