消息称三星电子完成 1c 纳米 DRAM 内存工艺开发，准备向量产转移

IT之家2025-07-01

IT之家 7 月 1 日消息，综合韩媒 ETNews、AJUNEWS、fnnews 报道，三星电子当地时间昨日下午对其第六代 10nm 级 DRAM 内存工艺 1c 纳米授予生产准备批准 (PRA)。这标志着三星完成 1c nm 内存开发，准备向量产转移。三星电子的 HBM4 12Hi 内存将使用 1c nm DRAM Die，可以说该内存工艺的表现在很大程度上影响了 DS 部门存储器事业部未来 ...

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