山东汉旗科技申请多芯片MOS集成封装结构专利，提高PCB板与芯片的散热效果

金融界2025-06-02

金融界2025年6月2日消息，国家知识产权局信息显示，山东汉旗科技有限公司申请一项名为“一种多芯片MOS集成封装结构”的专利，公开号CN120072808A，申请日期为2025年02月。专利摘要显示，本发明公开了一种多芯片MOS集成封装结构，属于芯片封装技术领域，包括，盒体，所述盒体的左侧开设有封装腔，所述封装腔内侧活动连接有承载器，所述承载器的装配槽内部安装有PCB板，所述PCB板上安装有若干组...

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