中微半导体申请气相沉积设备基片状态识别相关专利，提高基片状态识别的准确性

金融界2025-06-02

金融界2025年6月2日消息，国家知识产权局信息显示，中微半导体设备（上海）股份有限公司申请一项名为“气相沉积设备基片状态识别方法、系统及气相沉积设备”的专利，公开号CN120070301A，申请日期为2023年11月。专利摘要显示，本发明提供一种气相沉积设备基片状态识别方法、系统及气相沉积设备，在反应腔处于初始温度以及各个节点温度时拍摄托盘的图像，将各个节点温度对应的图像与初始温度对应的图像进行...

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