台积电A14/A16工艺放弃使用High NA EUV光刻机技术

爱集微2025-04-30

在台积电北美技术研讨会上，台积电表示无需使用High NA（高数值孔径）EUV光刻机来制造其A14 (1.4nm) 工艺的芯片。台积电在研讨会上介绍了A14工艺，并表示预计将于2028年投入生产。此前，台积电曾表示A16工艺将于2026年底问世，而且也不需要使用High NA EUV光刻设备。据悉，台积电业务发展高级副总裁Kevin Zhang表示：“从2nm到A14，我们无需使用High NA，...

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href=http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN2025043010355094e84e20&s=b><strong>爱集微</strong></a>\n\n\n</h4>\n\n</header>\n<article>\n<div>\n<p>在台积电北美技术研讨会上，台积电表示无需使用High NA（高数值孔径）EUV光刻机来制造其A14 (1.4nm) 工艺的芯片。台积电在研讨会上介绍了A14工艺，并表示预计将于2028年投入生产。此前，台积电曾表示A16工艺将于2026年底问世，而且也不需要使用High NA EUV光刻设备。据悉，台积电业务发展高级副总裁Kevin Zhang表示：“从2nm到A14，我们无需使用High NA，...</p>\n\n<a 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EUV光刻机的公司，并计划于2025年开始在Intel 18A制程中采用High NA EUV光刻机生产芯片。一切都与价格有关台积电迟迟未采用该技术的关键原因可能是ASML的High NA光刻机定价过高。据称，High NA EUV光刻机的价格约为3.8亿美元，是上一代Low NA EUV光刻机（约1.8亿美元）的两倍多。台积电显然已经计算出，使用Low NA EUV光刻机进行多次图案化更具成本效益，并且生产线的停留时间会略长。此外，使用当前一代设备，台积电还将受益于其已证实的卓越良率。英特尔是否会继续积极拥抱这项技术还有待观察，因为英特尔目前更换了新任CEO陈立武（Lip-Bu Tan），而陈立武对英特尔代工厂的计划尚未完全披露。英特尔与台积电或有新合作陈立武告诉分析师，他最近会见了台积电CEO魏哲家和台积电创始人兼前董事长张忠谋。“张忠谋和魏哲家是我的老朋友。我们最近也见了面，试图寻找可以合作的领域，从而实现双赢。”台积电A14制程的首款产品并未采用背面供电技术。而支持背面供电技术的A14P工艺将于2029年推出，其高性能版本A14X可能成为High NA EUV光刻技术的候选产品。即使英特尔和三星继续采用High NA EUV光刻技术，以在尖端工艺方面追赶台积电，他们也面临着开发成本的挑战。通过在这一领域的开拓，他们预计将为台积电铺平道路，当台积电认为采用High NA 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