三星全球首发量产第九代QLC闪存：一颗1Tb、写入提升100％

快科技2024-09-12

快科技9月12日消息，三星电子官方宣布，已经开始批量生产第九代QLC V-NAND闪存，单颗容量1Tb(128GB)。就在今年4月，三星开始量产第九代TLC V-NAND闪存，二者只间隔4个月。三星第九代QLC NAND闪存加入了多项创新：一是通道孔蚀刻(Channel Hole Etching)。基于双堆栈架构，实现了当前业内最高的单元堆叠层数(具体未公开)。同时优化存储单元面积、外围电路，...

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