HBM技术掀起内存革命：美光CEO揭秘晶圆消耗之谜

IT 商业新闻网03-22

美光CEO桑杰・梅赫罗特拉在电话会议上透露，相比传统内存，HBM内存在晶圆消耗上表现明显更高。目前，最先进的HBM3E内存在同一节点生产同等容量时，晶圆消耗是标准DDR5的三倍，而随着性能提升和封装复杂度加剧，HBM4的晶圆消耗比值还将进一步提升。　　HBM内存低良率成为高消耗的原因　　HBM内存采用多层DRAM内存TSV连接堆叠而成，一层出现问题就意味着整个堆栈报废。目前，HBM的良率仅约为...

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