高通公司申请多位磁阻随机存取存储器单元专利，自由层的磁矩可以单独地或以其他方式独立于其他自由层进行切换

金融界2023-12-15

专利摘要显示，公开了多位磁阻随机存取存储器(MRAM)单元的示例。多位MRAM单元可以包括固定层、交替堆叠的N个隧道势垒和N个自由层、以及隧道帽。可以表示MRAM单元的位数的N可以大于或等于2。固定层的磁矩可以固定在一个垂直方向上。在施加切换电流时，自由层的磁矩可以从一个垂直方向可切换到其他垂直方向。切换电流对于不同层可以不同。当切换电流被单独施加时，自由层的磁矩可以单独地或以其他方式独立于其他...

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