台积电申请半导体器件及其制造方法专利，提供了一种半导体器件及其制造方法

金融界2023-12-06

专利摘要显示，本申请的实施例提供了一种半导体器件及其制造方法。制造半导体器件的方法包括：提供伪结构，伪结构包括设置在衬底上方的多个沟道层、设置在多个沟道层中的相邻沟道层之间的内部间隔件、以及插入多个沟道层并沿第一方向纵向延伸的栅极结构。形成第一沟槽，第一沟槽将栅极结构划分成区段，其中，第一沟槽在垂直于第一方向的第二方向上纵向延伸。在第一沟槽中沉积第一隔离部件。该方法还包括蚀刻栅极结构和多个沟道层以...

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{"i18n":{"language":"zh_CN"},"isChannel":false,"data":{"share":"https://www.laohu8.com/m/news/2389920087?lang=zh_CN&edition=full","thumbnail":"","is_english":false,"pubTime":"2023-12-06 16:51","share_image_url":"https://static.laohu8.com/9a95c1376e76363c1401fee7d3717173","id":"2389920087","market":"us","top_or_hot":-1,"title":"台积电申请半导体器件及其制造方法专利，提供了一种半导体器件及其制造方法","media":"金融界","content":"<div>\n<p>专利摘要显示，本申请的实施例提供了一种半导体器件及其制造方法。制造半导体器件的方法包括：提供伪结构，伪结构包括设置在衬底上方的多个沟道层、设置在多个沟道层中的相邻沟道层之间的内部间隔件、以及插入多个沟道层并沿第一方向纵向延伸的栅极结构。形成第一沟槽，第一沟槽将栅极结构划分成区段，其中，第一沟槽在垂直于第一方向的第二方向上纵向延伸。在第一沟槽中沉积第一隔离部件。该方法还包括蚀刻栅极结构和多个沟道层以...</p>\n\n<a href=\"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN202312061653028234d553&s=b\">网页链接</a>\n\n</div>\n","source":"tencent","html":"<!DOCTYPE html>\n<html>\n<head>\n<meta http-equiv=\"Content-Type\" content=\"text/html; charset=utf-8\" />\n<meta name=\"viewport\" content=\"width=device-width,initial-scale=1.0,minimum-scale=1.0,maximum-scale=1.0,user-scalable=no\"/>\n<meta name=\"format-detection\" content=\"telephone=no,email=no,address=no\" />\n<title>台积电申请半导体器件及其制造方法专利，提供了一种半导体器件及其制造方法</title>\n<style type=\"text/css\">\na,abbr,acronym,address,applet,article,aside,audio,b,big,blockquote,body,canvas,caption,center,cite,code,dd,del,details,dfn,div,dl,dt,\nem,embed,fieldset,figcaption,figure,footer,form,h1,h2,h3,h4,h5,h6,header,hgroup,html,i,iframe,img,ins,kbd,label,legend,li,mark,menu,nav,\nobject,ol,output,p,pre,q,ruby,s,samp,section,small,span,strike,strong,sub,summary,sup,table,tbody,td,tfoot,th,thead,time,tr,tt,u,ul,var,video{ font:inherit;margin:0;padding:0;vertical-align:baseline;border:0 }\nbody{ font-size:16px; line-height:1.5; color:#999; background:transparent; }\n.wrapper{ overflow:hidden;word-break:break-all;padding:10px; }\nh1,h2{ font-weight:normal; line-height:1.35; margin-bottom:.6em; }\nh3,h4,h5,h6{ line-height:1.35; margin-bottom:1em; }\nh1{ font-size:24px; }\nh2{ font-size:20px; }\nh3{ font-size:18px; }\nh4{ font-size:16px; }\nh5{ font-size:14px; }\nh6{ font-size:12px; }\np,ul,ol,blockquote,dl,table{ margin:1.2em 0; }\nul,ol{ margin-left:2em; }\nul{ list-style:disc; }\nol{ list-style:decimal; }\nli,li p{ margin:10px 0;}\nimg{ max-width:100%;display:block;margin:0 auto 1em; }\nblockquote{ color:#B5B2B1; border-left:3px solid #aaa; padding:1em; }\nstrong,b{font-weight:bold;}\nem,i{font-style:italic;}\ntable{ width:100%;border-collapse:collapse;border-spacing:1px;margin:1em 0;font-size:.9em; }\nth,td{ padding:5px;text-align:left;border:1px solid #aaa; }\nth{ font-weight:bold;background:#5d5d5d; }\n.symbol-link{font-weight:bold;}\n/* header{ border-bottom:1px solid #494756; } */\n.title{ margin:0 0 8px;line-height:1.3;color:#ddd; }\n.meta {color:#5e5c6d;font-size:13px;margin:0 0 .5em; }\na{text-decoration:none; color:#2a4b87;}\n.meta .head { display: inline-block; overflow: hidden}\n.head .h-thumb { width: 30px; height: 30px; margin: 0; padding: 0; border-radius: 50%; float: left;}\n.head .h-content { margin: 0; padding: 0 0 0 9px; float: left;}\n.head .h-name {font-size: 13px; color: #eee; margin: 0;}\n.head .h-time {font-size: 11px; color: #7E829C; margin: 0;line-height: 11px;}\n.small {font-size: 12.5px; display: inline-block; transform: scale(0.9); -webkit-transform: scale(0.9); transform-origin: left; -webkit-transform-origin: left;}\n.smaller {font-size: 12.5px; display: inline-block; transform: scale(0.8); -webkit-transform: scale(0.8); transform-origin: left; -webkit-transform-origin: left;}\n.bt-text {font-size: 12px;margin: 1.5em 0 0 0}\n.bt-text p {margin: 0}\n</style>\n</head>\n<body>\n<div class=\"wrapper\">\n<header>\n<h2 class=\"title\">\n台积电申请半导体器件及其制造方法专利，提供了一种半导体器件及其制造方法\n</h2>\n\n<h4 class=\"meta\">\n\n\n2023-12-06 16:51 北京时间&nbsp;&nbsp;&nbsp;<a href=http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN202312061653028234d553&s=b><strong>金融界</strong></a>\n\n\n</h4>\n\n</header>\n<article>\n<div>\n<p>专利摘要显示，本申请的实施例提供了一种半导体器件及其制造方法。制造半导体器件的方法包括：提供伪结构，伪结构包括设置在衬底上方的多个沟道层、设置在多个沟道层中的相邻沟道层之间的内部间隔件、以及插入多个沟道层并沿第一方向纵向延伸的栅极结构。形成第一沟槽，第一沟槽将栅极结构划分成区段，其中，第一沟槽在垂直于第一方向的第二方向上纵向延伸。在第一沟槽中沉积第一隔离部件。该方法还包括蚀刻栅极结构和多个沟道层以...</p>\n\n<a href=\"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN202312061653028234d553&s=b\">网页链接</a>\n\n</div>\n\n\n</article>\n</div>\n</body>\n</html>\n","isBrief":false,"type":0,"news_type":1,"symbol":"LU0878005551.USD","symbol_name":"UBS (LUX) KEY SELEC ASIA ALLOCATION OPPORTUNITY (USD) \"P\" (USD) ACC","start_time":0,"source_url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN202312061653028234d553&s=b","article_id":"2389920087","we_media_id":null,"thumbnails":[],"rights":{"source":"tencent","url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN202312061653028234d553&s=b","rn_cache_url":null,"customStyle":"body{padding-top:10px;}#news_title{font-weight:bold;#titleStyle#;}#news_description span{font-size:12px;#descriptionStyle#;}.footer-note{#statement#}","selectors":".mod-LoadTzbdNews, body","filters":".relate-stock, .hot-list, .recom-box, .wx-sou","directOrigin":true},"url":"https://stock-news.laohu8.com/highlight/detail?id=2389920087","pubTimestamp":1701852710,"columns":[],"sourceInfo":{"source_id":"tencent","name":"腾讯"},"weMediaInfo":null,"summary":"专利摘要显示，本申请的实施例提供了一种半导体器件及其制造方法。制造半导体器件的方法包括：提供伪结构，伪结构包括设置在衬底上方的多个沟道层、设置在多个沟道层中的相邻沟道层之间的内部间隔件、以及插入多个沟道层并沿第一方向纵向延伸的栅极结构。形成第一沟槽，第一沟槽将栅极结构划分成区段，其中，第一沟槽在垂直于第一方向的第二方向上纵向延伸。在第一沟槽中沉积第一隔离部件。该方法还包括蚀刻栅极结构和多个沟道层以形成第二沟槽。第二沟槽在第一方向上纵向延伸并暴露内部间隔件。在第二沟槽中沉积第二隔离部件。在半导体器件的俯视图中，第二隔离部件与第一隔离部件相交。","collect":0,"end_time":0,"defaultTopTitle":"qq.com","property":[],"viewcount":null,"language":"zh","relate_stocks":{"LU0878005551.USD":"UBS (LUX) KEY SELEC ASIA ALLOCATION OPPORTUNITY (USD) \"P\" (USD) ACC","LU1989764664.SGD":"CPR Invest - Global Disruptive Opportunities A2 Acc SGD-H","LU2491049909.HKD":"WELLINGTON SUSTAINABLE OUTCOMES \"A\" (HKD) ACC","IE00B3M56506.USD":"NEUBERGER BERMAN EMERGING MARKETS EQUITY \"A\" (USD) ACC","BK4532":"文艺复兴科技持仓","BK4581":"高盛持仓","BK4554":"元宇宙及AR概念","SG9999000418.SGD":"Aberdeen Standard Global Technology SGD","LU1989764748.USD":"东方汇理环球颠覆性机遇A2 Acc","BK4527":"明星科技股","LU2491050071.SGD":"WELLINGTON SUSTAINABLE OUTCOMES \"A\" (SGDHDG) ACC","BK4512":"苹果概念","LU0572939691.SGD":"Janus Henderson Horizon Asian Dividend Income A2 SGD","BK4526":"热门中概股","LU2491050154.USD":"WELLINGTON SUSTAINABLE OUTCOMES \"A\" (USD) ACC","BK4141":"半导体产品","BK4534":"瑞士信贷持仓","BK4585":"ETF&股票定投概念","BK4503":"景林资产持仓","BK4533":"AQR资本管理(全球第二大对冲基金)","03145":"华夏亚洲高息股","BK4591":"室温超导概念","LU0541501648.USD":"ALLSPRING  EMERGING MARKETS EQUITY \"A\" (USD) ACC","BK4505":"高瓴资本持仓","LU0572940350.SGD":"Janus Henderson Horizon Asian Dividend Income A3 SGD","TSM":"台积电","BK4550":"红杉资本持仓","LU0541502299.USD":"ALLSPRING  EMERGING MARKETS EQUITY \"I\" (USD) ACC","BK4588":"碎股","BK4548":"巴美列捷福持仓","LU0264606111.USD":"Janus Henderson Horizon Asian Dividend Income A2 USD","SG9999004220.SGD":"Nikko AM Shenton Asia Dividend Equity Fund  SGD"},"translate_title":"TSMC applied for a patent on a semiconductor device and a manufacturing method thereof, and provided a semiconductor device and a manufacturing method thereof","themeId":null,"isJumpTheme":false,"ttsUrl":null,"symbols_score_info":{"TSM":1,"03145":0.6},"content_text":"专利摘要显示，本申请的实施例提供了一种半导体器件及其制造方法。制造半导体器件的方法包括：提供伪结构，伪结构包括设置在衬底上方的多个沟道层、设置在多个沟道层中的相邻沟道层之间的内部间隔件、以及插入多个沟道层并沿第一方向纵向延伸的栅极结构。形成第一沟槽，第一沟槽将栅极结构划分成区段，其中，第一沟槽在垂直于第一方向的第二方向上纵向延伸。在第一沟槽中沉积第一隔离部件。该方法还包括蚀刻栅极结构和多个沟道层以形成第二沟槽。第二沟槽在第一方向上纵向延伸并暴露内部间隔件。在第二沟槽中沉积第二隔离部件。在半导体器件的俯视图中，第二隔离部件与第一隔离部件相交。","kind":"news","is_publish_news":true,"is_publish_highlight":false,"is_publish_live":false,"is_publish_wemedia":null,"editions":null,"column":"","sentiment":"0","news_tag":"","news_rank":0,"symbols":[],"gpt_button":0,"need_auth":false,"code":"91000000","status":"200"},"commentList":[],"isCommentEnd":true,"newsSizeData":{"likeSize":0,"commentSize":0,"repostSize":0,"favoriteSize":0,"likeStatus":false,"favoriteStatus":false},"APP":{"userAgent":"Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)","isDev":false,"isTTM":false,"tenantId":"TBCN","deviceId":"web-server-community-laohu8-v3","version":"4.36.2","shortVersion":"4.36.2","platform":"web","vendor":"web","appName":"laohu8","isIOS":false,"isAndroid":false,"isTiger":false,"isTHS":false,"isWeiXin":false,"isWeiXinMini":false,"isWeiBo":false,"isQQ":false,"isBaiduSwan":false,"isBaiduBox":false,"isDingTalk":false,"isToutiao":false,"isOnePlus":false,"isHuaWei":false,"isXiaomi":false,"isXiaomiWebView":false,"isOppo":false,"isVivo":false,"isSamsung":false,"isMobile":false},"href":"/m/news/2389920087","isCrawlerRequest":true}