台积电开发SOT-MRAM阵列芯片，功耗仅类似技术的1%

老虎资讯综合01-18

1月18日，台积电在次世代MRAM存储器相关技术传捷报，携手工研院开发出自旋轨道转矩磁性存储器（SOT-MRAM）阵列芯片，搭配创新的运算架构，功耗仅其他类似技术的1%。台积电已经成功开发出22纳米、16/12纳米制程等相关MRAM产品线，并手握存储器、车用等市场订单，抢占MRAM商机。（台湾经济日报）

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