博时港交所韩交所半导体指数ETF(03516)_个股概要_股票价格_最新资讯_行情走势_历史数据 - 老虎社区

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03516 博时港交所韩交所半导体指数ETF

已收盘 09-24 15:42:32

9.830

-0.170

-1.70%

最高9.875	最低9.820	成交量244.23万
今开9.875	昨收10.000	日振幅0.55%
总市值5,112万	流通市值5,112万	总股本520.00万
成交额2,445万	换手率46.97%	流通股本520.00万
市净率--	ROE--	每股收益0.00
52周最高--	52周最低--	市盈率--
股息--	股息收益率--	ROA--

数据加载中...

北京优虎网络科技有限公司

免责声明:香港交易所资讯服务有限公司、其控股公司及／或该等控股公司的任何附属公司均竭力确保所提供信息的准确和可靠度，但不能保证其绝对准确和可靠，且亦不会承担因任何不准确或遗漏而引起的任何损失或损害的责任（不管是否侵权法下的责任或合约责任又或其它责任）

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RAN项目提供支持","url":"https://stock-news.laohu8.com/highlight/detail?id=2669486789","media":"格隆汇","labels":[],"top":-1,"itemType":null,"share":"https://www.laohunote.com/m/news/2669486789?lang=zh_cn&edition=full","pubTime":"2026-09-23 21:06","pubTimestamp":1790168788,"startTime":"0","endTime":"0","summary":"","market":"hk","thumbnail":"","type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://www.gelonghui.com/rss/live/live.xml","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"0","news_top_title":null,"news_tag":"","news_rank":0,"length":0,"strategy_id":0,"source":"live_gelonghui","symbols":["03516"],"isVideo":false,"video":null,"gpt_icon":0},{"id":"2669025101","title":"三星电子调整下一代 DRAM 路线图，将 B1b 命名为 D0a","url":"https://stock-news.laohu8.com/highlight/detail?id=2669025101","media":"链捕手","labels":["productRelease"],"top":-1,"itemType":null,"share":"https://www.laohunote.com/m/news/2669025101?lang=zh_cn&edition=full","pubTime":"2026-09-23 17:04","pubTimestamp":1790154273,"startTime":"0","endTime":"0","summary":" ChainCatcher 消息，据 ZDNet Korea 报道，三星电子调整下一代 DRAM 战略，将此前以项目形式开发的 B1b 纳入正式路线图，并命名为首款 10 纳米以下 DRAM D0a。此前 D0a 指垂直晶体管 DRAM，现该产品被单独归类为 D0a-V。此次更名是为加快在通用 DRAM 中导入先进封装。B1b 将存储单元与周边驱动电路分别在不同晶圆上制造后再键合，采用晶圆对晶圆混合键合，通过铜互连直接连接。目前已商用 DRAM 为 1c，即第 6 代 10 纳米级、线宽约 11 至 12 纳米；下一代 1d 为第 7 代 10 纳米级、线宽约 10 至 11 纳米，被视为事实上最后的 10 纳米级产品，相关线宽属于营销用语而非实际物理尺寸。垂直晶体管可将单元内晶体管垂直布置，把单元面积从 6F² 缩至 4F²，但需应对高深宽比刻蚀和漏电流，开发难度较高。晶圆对晶圆混合键合已在 CMOS 图像传感器和高堆叠 NAND 中量产应用。三星电子正评估将 B1b 用于第 8 代高带宽内存 HBM5。HBM5 预计约 2029 年量产，目标是较 HBM4E 将运行速度提高 50% 以上。业界估计，基于 B1b 的 D0a DRAM 最快约两年后商用，具体量产投资日程或于明年年中确定。 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